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MCT210
OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT
APPROVALS l UL recognised, File No. E91231 DESCRIPTION The MCT210 optically coupled isolator consists of an infrared light emitting diode and NPN silicon photo transistor in a standard 6 pin dual in line plastic package. FEATURES Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l All electrical parameters 100% tested l Custom electrical selections available
l
2.54 6.4 6.2 1.54 8.8 8.4 1 2 3
Dimensions in mm 6 5 4
4.3 4.1 0.5 0.3
7.8 7.4
0.5
3.3
9.6 8.4
ABSOLUTE MAXIMUM RATINGS (25C unless otherwise specified) Storage Temperature -55C to + 150C Operating Temperature -55C to + 100C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260C INPUT DIODE Forward Current Reverse Voltage Power Dissipation OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Collector-base Voltage BVCBO Emitter-collector Voltage BVECO Power Dissipation POWER DISSIPATION 30V 30V 6V 160mW 60mA 6V 105mW
APPLICATIONS DC motor controllers l Industrial systems controllers l Measuring instruments l Signal transmission between systems of different potentials and impedances
l
OPTION SM SURFACE MOUNT
OPTION G
5.08 max. 1.2 0.6 1.4 0.9 0.26 10.16
Total Power Dissipation 200mW (derate linearly 2.67mW/C above 25C)
10.2 9.5
ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581
7/12/00
DB91089-AAS/A2
ELECTRICAL CHARACTERISTICS ( TA= 25C Unless otherwise noted ) PARAMETER Input Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) Collector-emitter Breakdown (BVCEO) ( note 2 ) Collector-base Breakdown (BVCBO) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) Current Transfer Ratio (CTR) MIN TYP MAX UNITS 1.2 6 10 30 30 6 50 1.5 V V A V V V nA TEST CONDITION IF = 40mA IR = 10A VR = 6V IC = 1mA IC = 10A IE = 100A VCE = 10V 3.2mA IF to 32mAIF , 0.4V VCE 10mA IF , 5V VCE 32mA IF , 16mA IC See note 1 See note 1 VIO = 500V (note 1) VCC = 5V , fig 1 IC= 2mA, RL = 100
Output
Coupled
50 150
% % 0.4 V VRMS VPK
Collector-emitter Saturation VoltageVCE(SAT) Input to Output Isolation Voltage VISO 5300 7500
Input-output Isolation Resistance RISO 5x1010 Rise Time Fall Time tr tf 4 5
s s
Note 1 Note 2
Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory.
VCC Input RL = 100 Output Output 10% tr tf ton toff
10%
90%
90%
FIG 1
7/12/00
DB91089-AAS/A2
Collector Power Dissipation vs. Ambient Temperature 200 Collector power dissipation P C (mW) 2.8 Relative current transfer ratio 150 2.4 2.0 1.6 1.2 0.8 0.4 0 -30 0 25 50 75 100 125 1
Relative Current Transfer Ratio vs. Forward Current
100
50
VCE = 0.4V TA = 25C 2 5 10 20 50
Ambient temperature TA ( C ) Forward Current vs. Ambient Temperature 80 Current transfer ratio CTR (%) 70 Forward current I F (mA) 60 50 40 30 20 10 -30 0 25 50 75 100 125
Forward current IF Current Transfer Ratio vs. Forward Current 320 280 240 200 160 120 80 40 0 1 2 5 10 20 50 VCE = 5V TA = 25C
Ambient temperature TA ( C ) Relative Current Transfer Ratio vs. Ambient Temperature 1.5 Relative current transfer ratio
Forward current IF (mA) Collector-emitter Saturation Voltage vs. Ambient Temperature 0.56 0.48 0.40 0.32 0.24 0.16 0.08 0 -30 0 25 50 75 Ambient temperature TA ( C ) 100 IF = 32mA IC = 16mA
1.0
0.5
0 -30 0 25 50 75 100 Ambient temperature TA ( C )
7/12/00
Collector-emitter saturation voltage V
IF = 10mA VCE = 5V
CE(SAT)
(V)
DB91089-AAS/A2

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